Datasheet4U Logo Datasheet4U.com

IRFP15N60L Datasheet

The IRFP15N60L is a HEXFET Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRFP15N60L
ManufacturerInternational Rectifier
Overview PD - 94415 SMPS MOSFET IRFP15N60L HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies . and Benefits
* SuperFast body diode eliminates the need for external diodes in ZVS applications.
* Lower Gate charge results in simpler drive requirements.
* Enhanced dv/dt capabilities offer improved ruggedness. TO-247AC
* Higher Gate voltage threshold offers improved noise immunity . Absolute Max.
Part NumberIRFP15N60L
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.46Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for . DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=9A IGSS Gate Source Leakage Current VGS=±30V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=600V; VGS=0 VSD Diode Forward Voltage IS=1.
Part NumberIRFP15N60L
DescriptionPower MOSFET
ManufacturerVishay
Overview IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 100 30 46 Single 0.385 D TO-247 FEATURES .
* Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications Available
* Lower Gate Charge Results in Simple Drive RoHS* COMPLIANT Requirements
* Enhanced dV/dt Capabilities Offer Improved Ruggedness
* Higher Gate Voltage Threshold Offers Improved Noise Immunity
* Lead (.

Similar Datasheets

Part Number Manufacturer Description
IRFP15N60LPBF International Rectifier SMPS MOSFET