Datasheet Details
| Part number | IRFP15N60L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.21 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFP15N60L-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | IRFP15N60L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.21 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFP15N60L-INCHANGE.pdf |
|
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·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.46Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 15 A Ptot Total Dissipation@TC=25℃ 280 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.83 ℃/W IRFP15N60L isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRFP15N60L | HEXFET Power MOSFET | International Rectifier |
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IRFP15N60L | Power MOSFET | Vishay |
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