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IRFP23N50L N-Channel MOSFET

IRFP23N50L Description

iscN-Channel MOSFET Transistor IRFP23N50L *.

IRFP23N50L Features

* Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX)
* Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSO

IRFP23N50L Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IRFP23N50L
Manufacturer
INCHANGE
File Size
395.36 KB
Datasheet
IRFP23N50L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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