Download IRFP3306 Datasheet PDF
IRFP3306 page 2
Page 2

Datasheet Summary

isc N-Channel MOSFET Transistor IRFP3306,IIRFP3306 - Features - Static drain-source on-resistance: RDS(on)≤4.2mΩ - Enhancement mode: - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - High Efficiency Synchronous Rectification in SMPS - Uninterruptible Power Supply - High Speed Power Switching - Hard Switched And High Frequency Circuits -...