IRFP4110 - N-Channel MOSFET

Features

br>.
Static drain-source on-resistance: RDS(on)≤4.5mΩ.
Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IRFP4110
Manufacturer	Inchange Semiconductor
File Size	238.82 KB
Description	N-Channel MOSFET
Datasheet	IRFP4110 Datasheet
Additional preview pages of the IRFP4110 datasheet.

📁 Similar Datasheet

IRFP4110PBF - HEXFET Power MOSFET (International Rectifier)
IRFP4127PbF - Power MOSFET (International Rectifier)
IRFP4137 - Power MOSFET (Infineon)
IRFP4137PBF - Power MOSFET (International Rectifier)
IRFP4137PbF - Power MOSFET (Infineon)
IRFP4004PbF - Power MOSFET (International Rectifier)
IRFP4227PBF - Power MOSFET (International Rectifier)
IRFP4227PbF - Power MOSFET (Infineon)
IRFP4228PBF - Power MOSFET (International Rectifier)
IRFP4229PBF - Power MOSFET (International Rectifier)

Other Datasheets by INCHANGE

IRFP4127 - N-Channel MOSFET
IRFP4137 - N-Channel MOSFET
IRFP4004 - N-Channel MOSFET
IRFP4227 - N-Channel MOSFET
IRFP4227PBF - N-Channel MOSFET
IRFP4229 - N-Channel MOSFET
IRFP4310Z - N-Channel MOSFET
IRFP4321 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4110，IIRFP4110 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.5mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 670 PD Total Dissipation @TC=25℃ 370 Tj Max.

Published: Oct 3, 2020 |