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IRFP4321 - N-Channel MOSFET

Features

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  • Static drain-source on-resistance: RDS(on)≤15.5mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4321，IIRFP4321 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤15.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Motion Control Applications ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 78 IDM Drain Current-Single Pulsed 330 PD Total Dissipation @TC=25℃ 310 Tj Max.
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