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IRFP4410Z - N-Channel MOSFET

Features

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  • Static drain-source on-resistance: RDS(on)≤9.0mΩ.
  • Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor IRFP4410Z，IIRFP4410Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.0mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 97 IDM Drain Current-Single Pulsed 390 PD Total Dissipation @TC=25℃ 230 Tj Max.
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