Datasheet Summary
isc N-Channel MOSFET Transistor
IRFP4668，IIRFP4668
- Features
- Static drain-source on-resistance:
RDS(on)≤9.7mΩ
- Enhancement mode:
Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched And High Frequency Circuits
-...
