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IRFP4668 N-Channel MOSFET

IRFP4668 Description

isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 *.

IRFP4668 Features

* Static drain-source on-resistance: RDS(on)≤9.7mΩ
* Enhancement mode: Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Efficiency Synchronous Rectification in SMP

IRFP4668 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IRFP4668
Manufacturer
INCHANGE
File Size
238.89 KB
Datasheet
IRFP4668-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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