IRFP4905 Datasheet P-Channel MOSFET

Manufacturer: Inchange Semiconductor

IRFP4905 p-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRFP4905
Manufacturer	Inchange Semiconductor
File Size	248.70 KB
Description	P-Channel MOSFET
Datasheet	IRFP4905 Datasheet

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -70 A IDM Drain Current-Single Pluse -280 A PD Total Dissipation @TC=25℃ 170 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.75 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor IRFP4905 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc P-Channel MOSFET Transistor IRFP4905.

Key Features

Drain Current.
ID= -70A@ TC=25℃.
Drain Source Voltage- : VDSS= -55V(Min).
Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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