IRFR3711Z - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤5.7mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRFR3711Z N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IRFR3711Z

Datasheet Details

Part number	IRFR3711Z
Manufacturer	Inchange Semiconductor
File Size	238.65 KB
Description	N-Channel MOSFET
Datasheet	IRFR3711Z Datasheet
Additional preview pages of the IRFR3711Z datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFR3711Z, IIRFR3711Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.7mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Synchronous Buck Converters For Computer Processor Power ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 93 IDM Drain Current-Single Pulsed 370 PD Total Dissipation @TC=25℃ 79 Tj Max.

Published: Oct 13, 2020 |