Datasheet Details
| Part number | IRFS3307ZTRL |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.96 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFS3307ZTRL-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | IRFS3307ZTRL |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.96 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFS3307ZTRL-INCHANGE.pdf |
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·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching application ·Hard switched and high frequency circuits ·Uninterruptible power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 120 A Ptot Total Dissipation@TC=25℃ 230 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~175 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.65 ℃/W IRFS3307ZTRL isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS;
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