Datasheet4U Logo Datasheet4U.com

IRFS3307 - Power MOSFET

Key Features

  • ted for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). ta.

📥 Download Datasheet

Datasheet Details

Part number IRFS3307
Manufacturer IRF
File Size 349.86 KB
Description Power MOSFET
Datasheet download datasheet IRFS3307 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFS3307 HEXFET Power MOSFET International Rectifier
IRFS3307PbF HEXFET Power MOSFET International Rectifier
IRFS3307ZPBF HEXFET Power MOSFET International Rectifier
IRFS3307ZTRL N-Channel MOSFET INCHANGE
IRFS3306 N-Channel MOSFET INCHANGE

Other Datasheets by IRF

Part Number Description
IRFS33N15D Power MOSFET
IRFS31N20D Power MOSFET
IRFS3207 Power MOSFET
IRFS3507 Power MOSFET
IRFS350A Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901C IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 75V 5.0m: 6.