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IRFS3307ZTRL - N-Channel MOSFET

General Description

Drain Current ID=120A@ TC=25℃ Drain Source Voltage- : VDSS= 75V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching application Hard switched and high frequency circuits Uninterr

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching application ·Hard switched and high frequency circuits ·Uninterruptible power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 120 A Ptot Total Dissipation@TC=25℃ 230 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~175 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.65 ℃/W IRFS3307ZTRL isc website：www.