IRL520N - TO-220F N-Channel MOSFET
IRL520N Features
* Low drain-source on-resistance: RDS(on) ≤ 180mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* It is intended for general purpose switching application