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IRLR3705Z - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤8.0mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRLR3705Z

Datasheet Details

Part number IRLR3705Z
Manufacturer INCHANGE
File Size 238.20 KB
Description N-Channel MOSFET
Datasheet download datasheet IRLR3705Z Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRLR3705Z, IIRLR3705Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.0mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 89 IDM Drain Current-Single Pulsed 360 PD Total Dissipation @TC=25℃ 130 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.14 110 UNIT ℃/W ℃/W isc website：www.iscsemi.
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