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ISCN366P - Silicon NPN Power Transistor

General Description

DC Current Gain- : hFE= 20-60@IC = 0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

switching applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 20-60@IC = 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 5.0 A PC Collector Power Dissipation@ TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.