ISCN366P - Silicon NPN Power Transistor

Product Overview

INCHANGE

Datasheet Details

Part number	ISCN366P
Manufacturer	INCHANGE
File Size	251.61 KB
Description	Silicon NPN Power Transistor
Datasheet	ISCN366P Datasheet
Additional preview pages of the ISCN366P datasheet.

Product details

Description

DC Current Gain- : hFE= 20-60@IC = 0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current

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Published: Jun 30, 2022 |