ISCNH363N - Silicon NPN Power Transistor

Product Overview

INCHANGE

Datasheet Details

Part number	ISCNH363N
Manufacturer	INCHANGE
File Size	272.18 KB
Description	Silicon NPN Power Transistor
Datasheet	ISCNH363N Datasheet
Additional preview pages of the ISCNH363N datasheet.

Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 59 A PD Total Dissipation @TC=25℃ 235 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.53 UNIT ℃/W isc web

Features

Drain Current : ID= 59A@ TC=25℃.
Drain Source Voltage : VDSS= 300V(Min).
Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 30, 2022 |