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ISCNL256N Datasheet Preview

ISCNL256N Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
ISCNL256N
DESCRIPTION
·Drain Current ID=60A@ TC=25
·Drain Source Voltage-
: VDSS=60V(Min)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switch Mode Power Supply (SMPS)
·Uninterruptible Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS
Gate-Source Voltage
ID
Drain Current-continuous@ TC=25
IDM
Drain Current-Single Pluse
Ptot
Total Dissipation@TC=25
EAS*
Single pulse avalanche energy
IAR
Avalanche current
EAR
Repetitive avalanche energy
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
60
V
±20
V
60
A
240
A
150
W
1054
mJ
60
A
15
mJ
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Note:
* VDD=25V,L=0.4uH,RG=25Ω,IAR=60A
isc websitewww.iscsemi.com
MAX
0.833
UNIT
/W
1 isc & iscsemi is registered trademark




INCHANGE

ISCNL256N Datasheet Preview

ISCNL256N Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS=VGS,ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=30A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=60V; VGS= 0
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
RG
Gate resistance
f = 1.0MHz open drain
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 64V,
ID = 100A,
VGS =10V
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
VDD = 40V,
ID = 100A,
RG = 25Ω
tf
Turn-off Fall Time
ISD
Continuous Source Current
ISM
Pulsed Source Current
TC = 25 ºC
VSD
Diode Forward Voltage
IS=60A; VGS=0
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 40V,IF = 30A,
diF/dt =100A /μs
ISCNL256N
MIN TYP. MAX UNIT
60
V
0.8
1.7
2.0
V
11 mΩ
±10 uA
100 μA
3795
1456
pF
1101
0.75
Ω
338
12
nC
175
45
178
ns
1062
830
100
A
400
1.7
V
210
ns
1.5
uC
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number ISCNL256N
Description N-Channel MOSFET
Maker INCHANGE
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