Datasheet4U Logo Datasheet4U.com

ISCNL256N - N-Channel MOSFET

General Description

Drain Current ID=60A@ TC=25℃ Drain Source Voltage- : VDSS=60V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible P

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ISCNH060D N-Channel MOSFET Transistor Inchange Semiconductor
ISCNH370W N-Channel MOSFET Transistor Inchange Semiconductor
ISCNH371D N-Channel MOSFET Transistor Inchange Semiconductor
ISCNH372B N-Channel MOSFET Transistor Inchange Semiconductor
ISCNH373F N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
ISCN366P Silicon NPN Power Transistor
ISCN372M Silicon NPN Power Transistor
ISCN372N Silicon NPN Power Transistor
ISCNH363N Silicon NPN Power Transistor
ISC7805 Three Terminal Positive Voltage Regulator

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ISCNL256N DESCRIPTION ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ IDM Drain Current-Single Pluse Ptot Total Dissipation@TC=25℃ EAS* Single pulse avalanche energy IAR Avalanche current EAR Repetitive avalanche energy Tj Max.