Datasheet Summary
isc N-Channel MOSFET Transistor
Features
- Drain Current
- ID= 80A@ TC=25℃
- Drain Source Voltage-
VDSS= 75V(Min)
- Static Drain-Source On-Resistance
RDS(on) :7.1mΩ(Max)
- 175°C operating temperature
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable...