Inchange Semiconductor IXFP8N85X
N-Channel MOSFET
| Part No. | IXFP8N85X |
|---|---|
| Datasheet | IXFP8N85X Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Source Voltage- : VDSS ≥850V●Static Drain-Source On-Resistance : RDS(on) ≤ 850mΩ@VGS= 10V
●Fast Switching
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●DC-DC Converters●Switch-Mode and Resonant-Mode Power Supplies
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 850 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 16 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.63 UNIT ℃/W IXFP8N85X isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXFP8N85X
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=...