Inchange Semiconductor IXKC13N80C
N-Channel MOSFET
| Part No. | IXKC13N80C |
|---|---|
| Datasheet | IXKC13N80C Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●High power dissipation●Static drain-source on-resistance: RDS(on) ≤ 290mΩ@VGS=10V
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●APPLICATION
●DC/DC Converters
●High Current Switching
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 9 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~125 UNIT V V A A ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1 UNIT ℃/W IXKC13N80C isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXKC13N80C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 800 V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 100μA 2 4 V RDS(on) Drain-Source On-Re...