IXYS IXKC13N80C
CoolMOS Power MOSFET
IXKC13N80C Specifications
- Mount Type : Through Hole
- Breakdown Voltage : 800V
- RDS(on) Max : 290mΩ
- Input Capacitance : 2.3nF
- Terminals : 3
- Rise Time : 15ns
- Fall Time : 20ns
- Max Power Dissipation : 125W
- Power Dissipation : 130W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IXKC13N80C |
|---|---|
| Datasheet | IXKC13N80C Download |
| Manufacturer |  IXYS |
| Description | CoolMOS Power MOSFET |
| Buy | Stock & Price |
FEATURES
Conditions TVJ = 25°CMAXIMUM RATINGS
800 V● Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A
● 3rd generation CoolMOS™ 1) power 9 A MOSFET TJ start = 25°C; single pulse; ID = 3.4 A 670 mJ - high blocking capability TJ start = 25°C; repetitive; ID = 17 A 0.5 mJ - lowest resistance VDS < VDSS; IF = 17 A; TVJ = 150°C dIR /dt = 100 A/µs 6 V/ns t Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID90 u VDS = VGS; ID = 1 mA VDS = VDSS; VGS = 0 V -o VGS = ± 20 V; VDS = 0 V TVJ = 25°C TVJ = 125°C VGS = 0 V; VDS = 25 V; f = 1 MHz se VGS = 0 to 10 V; VDS = 640 V; ID = ID90 a VGS = 10 V; VDS = 640 V; TVJ = 125°C ph ID = 17 A; RG = 4.7 Ω 250 290 mΩ 2 4 V 25 µA 125 µA ±100 nA 2300 1250 60 90 10 40 25 25 75 10 pF pF pF nC nC nC ns ns ns ns 1.0 K/W - avalanche rated for unclamped inductive switching (UIS)
● Low thermal resista...
