Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- High power dissipation
- Static drain-source on-resistance:
RDS(on) ≤ 290mΩ@VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATION
- DC/DC Converters
- High Current Switching Applications
-...
