IXKC13N80C Datasheet CoolMOS Power MOSFET

Manufacturer: IXYS (now Littelfuse)

IXKC13N80C coolmos power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXKC13N80C
Manufacturer	IXYS (now Littelfuse)
File Size	440.47 KB
Description	CoolMOS Power MOSFET
Download	IXKC13N80C Download (PDF)

Overview

Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D G S ID25 = 13 A VDSS = 800 V RDS(on) max =.

Key Features

Conditions TVJ = 25°C Maximum Ratings 800 V.
Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A.
3rd generation CoolMOS™ 1) power 9 A MOSFET TJ start = 25°C; single pulse; ID = 3.4 A 670 mJ - high blocking capability TJ start = 25°C; repetitive; ID = 17 A 0.5 mJ - lowest resistance VDS < VDSS; IF = 17 A; TVJ = 150°C dIR /dt = 100 A/µs 6 V/ns t Condi.

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