IXKC13N80C - CoolMOS Power MOSFET

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IXYS Corporation

Part number	IXKC13N80C
Manufacturer	IXYS Corporation
File Size	440.47 KB
Description	CoolMOS Power MOSFET
Datasheet	IXKC13N80C Datasheet
Additional preview pages of the IXKC13N80C datasheet.

Conditions TVJ = 25°C Maximum Ratings 800 V.
Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A.
3rd generation CoolMOS™ 1) power 9 A MOSFET TJ start = 25°C; single pulse; ID = 3.4 A 670 mJ - high blocking capability TJ start = 25°C; repetitive; ID = 17 A 0.5 mJ - lowest resistance VDS < VDSS; IF = 17 A; TVJ = 150°C dIR /dt = 100 A/µs 6 V/ns t Condi.

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Published: Dec 27, 2006 |