Datasheet Summary
Advanced Technical Information
IXKC 13N80C
CoolMOS™ 1) Power MOSFET ISOPLUS™ Package
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Electrically Isolated Back Surface
ID25
= 13 A
VDSS
= 800 V
RDS(on) max = 290 mΩ
ISOPLUS220™
E72873
- isolated back surface
MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Features
Conditions TVJ = 25°C
Maximum Ratings 800 V
- Silicon chip on Direct-Copper-Bond substrate
- high power dissipation
± 20
- isolated mounting surface
TC = 25°C TC = 90°C
- 2500 V electrical isolation
- 3rd generation CoolMOS™ 1)...
