IXTA80N12T2 - N-Channel MOSFET

Datasheet Summary

Features

Drain-Source On-Resistance: RDS(on).

INCHANGE

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Datasheet Details

Part number	IXTA80N12T2
Manufacturer	INCHANGE
File Size	236.90 KB
Description	N-Channel MOSFET
Datasheet	IXTA80N12T2 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA80N12T2 ·FEATURES ·Drain-Source On-Resistance: RDS(on)<17mΩ ·With TO-220 packaging ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 10.4 6.6 80 PD Total Dissipation 325 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.

Published: Nov 6, 2020 |