IXTQ60N10T
Overview
- Drain Source Voltage- : VDSS= 200V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max)
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTQ60N10T |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 252.46 KB |
Related Datasheets
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