IXTU2N80P N-Channel MOSFET

INCHANGE

IXTU2N80P Description

isc N-Channel MOSFET Transistor IXTU2N80P *.

IXTU2N80P Features

* Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTU2N80P Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

IXTU2N80P Datasheet Preview — Preview of IXTU2N80P PDF

Datasheet Details

Part number: IXTU2N80P
Manufacturer: INCHANGE
File Size: 270.21 KB
Datasheet: IXTU2N80P-INCHANGE.pdf
Description: N-Channel MOSFET

📁 Related Datasheet

IXTU01N100 - Power MOSFET (IXYS Corporation)
IXTU01N100D - N-Channel MOSFET (IXYS Corporation)
IXTU01N80 - Power MOSFET (IXYS Corporation)
IXTU02N50D - Power MOSFET (IXYS Corporation)
IXTU1N80P - Power MOSFET (IXYS)
IXTU1R4N60P - Power MOSFET (IXYS)
IXTU4N60P - PolarHV Power MOSFET (IXYS)
IXTU4N70X2 - Power MOSFET (IXYS)

📌 All Tags

N-Channel MOSFET INCHANGE

INCHANGE IXTU2N80P-like datasheet

IXTU05N100 - N-Channel MOSFET
IXTU12N06T - N-Channel MOSFET
IXTU5N50P - N-Channel MOSFET
IXTU8N70X2 - N-Channel MOSFET
IXTA05N100 - N-Channel MOSFET
IXTA08N100P - N-Channel MOSFET