IXTU2N80P
Overview
- Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V
- Fully characterized avalanche voltage and current
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTU2N80P |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 270.21 KB |
Related Datasheets
- IXTU2N80P — IXYS — Power MOSFET