IXTU2N80P
Overview
- International Standard Packages
- Low QG
- Avalanche Rated
- Low Package Inductance
- Fast Intrinsic Rectifier Advantages
- High Power Density
- Easy to Mount
- Space Savings BVDSS VGS = 0V, ID = 250μA 800 V
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |