IXTU2N80P - Power MOSFET

Features

International Standard Packages.
Low QG.
Avalanche Rated.
Low Package Inductance.
Fast Intrinsic Rectifier Advantages.
High Power Density.
Easy to Mount.
Space Savings BVDSS VGS = 0V, ID = 250μA 800 V.

IXYS

Datasheet Details

Part number	IXTU2N80P
Manufacturer	IXYS
File Size	832.70 KB
Description	Power MOSFET
Datasheet	IXTU2N80P Datasheet
Additional preview pages of the IXTU2N80P datasheet.

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Full PDF Text Transcription

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PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Avalanche Rated G D Symbol E VDSS VDGR VGSS T VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD FC S Md B Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 2 4 2 100 5 70 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.

Published: Nov 2, 2020 |