IXTV30N50P N-Channel MOSFET

INCHANGE

IXTV30N50P Description

isc N-Channel MOSFET Transistor *.

IXTV30N50P Features

* Drain Source Voltage- : VDSS= 500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTV30N50P Applications

* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Plused 75 A PD Total Dissipation @TC=25℃ 460

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IXTV30N50P Datasheet Preview — Preview of IXTV30N50P PDF

Datasheet Details

Part number: IXTV30N50P
Manufacturer: INCHANGE
File Size: 245.27 KB
Datasheet: IXTV30N50P-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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