IXTY05N100 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTY05N100 N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTY05N100

Datasheet Details

Part number	IXTY05N100
Manufacturer	Inchange Semiconductor
File Size	260.83 KB
Description	N-Channel MOSFET
Datasheet	IXTY05N100 Datasheet
Additional preview pages of the IXTY05N100 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTY05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 0.

Published: Nov 23, 2020 |