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IXTY05N100 - Power MOSFET

Download the IXTY05N100 datasheet PDF. This datasheet also covers the IXTU05N100 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Fast Switching Times.
  • Avalanche Rated.
  • Rds(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTU05N100-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTY05N100 N-Channel MOSFET INCHANGE
IXTY01N100 Power MOSFET IXYS Corporation
IXTY01N100D N-Channel MOSFET IXYS Corporation
IXTY01N80 Power MOSFET IXYS Corporation
IXTY02N50D Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTY02N120P Power MOSFET
IXTY08N100D2 Power MOSFET
IXTY08N100P Power MOSFET
IXTY12N06T Power MOSFET
IXTY14N60X2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 =  RDS(on) 1000V 750mA 17 TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252 Maximum Ratings 1000 V 1000 V 30 V 40 V 750 mA 3 A 1 A 100 mJ 3 V/ns 40 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.40 g 0.