IXTY05N100 Description
+150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 1000 V 2.5 4.5 V 100 nA 25 A 500 A 17 G D S TO-252 (IXTY) G S D (TAB) D (TAB) G = Gate S = Source D = Drain TAB = Drain.
IXTY05N100 Key Features
- International Standard Packages
- Fast Switching Times
- Avalanche Rated
- Rds(on) HDMOSTM Process
- Rugged Polysilicon Gate Cell structure
- Extended FBSOA
- High Power Density
- Space Savings