IXTY1R6N50P
Overview
- Static drain-source on-resistance: RDS(on) ≤ 6.5Ω
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTY1R6N50P |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 261.60 KB |
Related Datasheets
- IXTY1R6N50P — IXYS — Power MOSFET