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IXTY1R6N50P - Power MOSFET

Key Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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IXTY1R4N100P Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intrinsic Rectifier Symbol E VDSS VDGR T VGSS VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD S FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 1.6 2.5 1.6 75 10 43 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.