IXTY2N60P - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTY2N60P N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTY2N60P

Datasheet Details

Part number	IXTY2N60P
Manufacturer	Inchange Semiconductor
File Size	260.86 KB
Description	N-Channel MOSFET
Datasheet	IXTY2N60P Datasheet
Additional preview pages of the IXTY2N60P datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTY2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pulsed 4 A PD Total Dissipation @TC=25℃ 55 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 2.27 UNIT ℃/W isc website：www.iscsemi.

Published: Nov 23, 2020 |