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IXTY3N60P - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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IXTY3N60P N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTY3N60P

Datasheet Details

Part number	IXTY3N60P
Manufacturer	Inchange Semiconductor
File Size	261.69 KB
Description	N-Channel MOSFET
Datasheet	IXTY3N60P Datasheet
Additional preview pages of the IXTY3N60P datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTY3N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.

Published: Nov 23, 2020 |