IXTY3N60P N-Channel MOSFET

INCHANGE

IXTY3N60P Description

isc N-Channel MOSFET Transistor IXTY3N60P *.

IXTY3N60P Features

* Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTY3N60P Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number: IXTY3N60P
Manufacturer: INCHANGE
File Size: 261.69 KB
Datasheet: IXTY3N60P-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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