Datasheet Details
| Part number | KSA940 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.17 KB |
| Description | PNP Transistor |
| Download | KSA940 Download (PDF) |
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| Part number | KSA940 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.17 KB |
| Description | PNP Transistor |
| Download | KSA940 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type KSC2073 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -150 V -150 V -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1.5 A 25 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W KSA940 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KSA940 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSA940 | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
KSA940 | Vertical Deflection Output Power Amplifier | ON Semiconductor |
| Part Number | Description |
|---|---|
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| KSA1381 | PNP Transistor |