Complement to KSD880W
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO C
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isc Silicon PNP Power Transistor
DESCRIPTION ·Complement to KSD880W ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ Ta=25℃
PC
Total Power Dissipation @ TC=25℃
-3
A
1.5
W
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
KSB834W
isc website：www.iscsemi.
KSB834W Datasheet
