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KSC5027 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 800V(Min) High Speed Switching Low Collector Saturation Voltage Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulato

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isc Silicon NPN Power Transistor KSC5027 DESCRIPTION ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 800V(Min) ·High Speed Switching ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic appliance applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.