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KSC5027 - NPN Silicon Transistor

General Description

TO 220

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Datasheet Details

Part number KSC5027
Manufacturer onsemi
File Size 220.50 KB
Description NPN Silicon Transistor
Datasheet download datasheet KSC5027 Datasheet

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DATA SHEET www.onsemi.com NPN Silicon Transistor KSC5027 High Voltage and High Reliability • High Speed Switching • Wide SOA ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Symbol Parameter Ratings Unit VCBO Collector−Base Voltage 1100 V VCEO Collector−Emitter Voltage 800 V VEBO Emitter−Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 10 A IB Base Current 1.5 A PC Collector Dissipation (TC = 25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature −55 ~ 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. T 1. Base 1 2.