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DATA SHEET www.onsemi.com
NPN Silicon Transistor
KSC5027
High Voltage and High Reliability
• High Speed Switching • Wide SOA
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Symbol
Parameter
Ratings
Unit
VCBO Collector−Base Voltage
1100
V
VCEO Collector−Emitter Voltage
800
V
VEBO Emitter−Base Voltage
7
V
IC
Collector Current (DC)
3
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current
1.5
A
PC
Collector Dissipation (TC = 25°C)
50
W
TJ
Junction Temperature
150
°C
TSTG Storage Temperature
−55 ~ 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
T
1. Base
1
2.