Datasheet Details
| Part number | KSC5027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.45 KB |
| Description | NPN Transistor |
| Datasheet | KSC5027-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor KSC5027.
| Part number | KSC5027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.45 KB |
| Description | NPN Transistor |
| Datasheet | KSC5027-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 800V(Min) ·High Speed Switching ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic appliance applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSC5027 | NPN Silicon Transistor | ON Semiconductor |
 |
KSC5027 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
KSC5027 | SILICON POWER TRANSISTOR | SavantIC |
|
KSC5027F | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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