Datasheet Details
| Part number | KSC5086 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 286.07 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 KSC5086 Datasheet
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| Part number | KSC5086 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 286.07 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
KSC5086 Datasheet
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·High Collector-Base Voltage: VCBO = 1500V(Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 16 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 http://www.Datasheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN KSC5086 TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 250mA;
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
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