KSC5086 Datasheet | Samsung Semiconductor

HIGH DEFINITION COLOR DISPLAY HORIZONTAL DEFLECTION OUTPUT (DAMPER DIODE BUILT IN) - High Collector -Base Voltage (VCBO=1500V) - High Speed Switching (tf=0.1usec Typ) NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR TO-3PF ABSOLUTE MIXIMUM RATING Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Junction Temperature S torage Temperature Collector Dissipation (T C=25 Symbol V CBO V CEO V EBO IC Rating 1500 800 6 7 1 6 5 0 150 - 55 ~ 150 Unit V V V A A W ) IC PC TJ T STG 1. Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (T C=25) Characteristic Collector Cutoff Current (VBE=0) Collector Cutoff Current Emitter Cutoff Current Base Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Damper Diode Turn On Voltage F all Time Symbol I CES ICBO I EBO VEBO h FE V CE(sat) V BE(sat) VF t F Test Condition V CE = 1400V, RBE = 0 V CB=800V, IE=0 V EB = 4V, IC = 0 I E = 250m A, IC = 0 V CE = 5V, IC = 1.0A I C = 5A, IB = 1.2A I C = 5A, IB = 1.2A I F= 6A V CC = 200V, IC = 4A I B1 = 0.8A, IB2 = -1.6A RL = 50 40 6 8 5 1.5 2 0.2 V V V u S Min Typ Max 1 10 200 Unit m A u A m A V ‹ http://.. NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR SILICON...