Inchange Semiconductor KSC5086
Silicon NPN Power Transistor
| Part No. | KSC5086 |
|---|---|
| Datasheet | KSC5086 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Base Voltage: VCBO = 1500V(Min)●High Switching Speed
●Built-in Damper Diode
APPLICATIONS
●Designed for use in high definition color display horizontal deflection output application.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 16 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN KSC5086 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 250mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A 1.5 V ICES Collector Cutoff Current VCE= 1...