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KSD1692 Datasheet Preview

KSD1692 Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
KSD1692
DESCRIPTION
·Low Collector–Emitter Sustaining Voltage
·High DC Current Gain
·Built-in a damper diode at E-C
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
Ta=25
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
5
A
1.3
W
15
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KSD1692 Datasheet Preview

KSD1692 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
KSD1692
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 3mA, L= 1.0mH
MIN
TY
P.
MAX
UNIT
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA
1.2
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 1.5mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10
μA
ICEO
Collector Cutoff Current
VCE= 100V; RBE=
1.0
mA
hFE-1
DC Current Gain
IC= 1.5 A; VCE= 2V
2000
20000
hFE-2
DC Current Gain
IC= 3 A; VCE= 2V
1000
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1.5A, IB1= IB2= 1.5mA;
RL= 27Ω; VCC40V
0.5
μs
2.0
μs
1.0
μs
hFE-1 Classifications
M
L
K
2000-5000 4000-12000 8000-20000
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KSD1692
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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KSD1692 Datasheet PDF





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