KSD2012 Overview
hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KSD2012 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA.
