KSD2012 transistor equivalent, npn transistor.
*Designed for audio frequency power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VAL.
*High DC Current Gain-
: hFE= 100 (Min)@ IC= 0.5A
*Low Saturation Voltage-
: VCE(sat)= 1.0V (Max)
*High Power Dissipation
: PC= 25 W(Max)@ TC= 25℃
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance.
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