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KSD2012 Datasheet Preview

KSD2012 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
KSD2012
DESCRIPTION
·High DC Current Gain-
: hFE= 100 (Min)@ IC= 0.5A
·Low Saturation Voltage-
: VCE(sat)= 1.0V (Max)
·High Power Dissipation
: PC= 25 W(Max)@ TC= 25
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
0.5
A
2.0
W
25
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KSD2012 Datasheet Preview

KSD2012 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
KSD2012
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 60V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 7V ; IC=0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 5V
MIN TYP. MAX UNIT
60
V
1.0
V
1.0
V
0.1 mA
10
uA
100
320
20
3
MHz
hFE-1 Classifications
Y
G
100-200 150-320
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KSD2012
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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