KSD2012 - NPN Epitaxial Silicon Transistor

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Datasheet Details

Part number	KSD2012
Manufacturer	onsemi
File Size	171.00 KB
Description	NPN Epitaxial Silicon Transistor
Datasheet	KSD2012 Datasheet

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NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier KSD2012 • Complementary to KSB1366 • This is a Pb−Free Device ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector−Base Voltage 60 V VCEO Collector−Emitter Voltage 60 V VEBO Emitter−Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector Power Dissipation (TC = 25°C) 25 W TJ Junction Temperature 150 °C Tstg Storage Temperature −55~150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET www.onsemi.com 1. Base 2. Collector 3.