Part KSD2012
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 192.72 KB
Inchange Semiconductor
KSD2012

Overview

High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A Low Saturation Voltage- : VCE(sat)= 1.0V (Max) High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation.