Datasheet Details
| Part number | KSD2012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.72 KB |
| Description | NPN Transistor |
| Datasheet | KSD2012-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor KSD2012.
| Part number | KSD2012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.72 KB |
| Description | NPN Transistor |
| Datasheet | KSD2012-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 2.0 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KSD2012 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSD2012 | NPN Epitaxial Silicon Transistor | ON Semiconductor |
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KSD2012 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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