| Part number | KSD2012 |
|---|---|
| Datasheet | KSD2012-INCHANGE.pdf |
| File Size | 192.72 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KSD2012 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
KSD2012 | NPN Epitaxial Silicon Transistor | ON Semiconductor |
 |
KSD2012 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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