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KSD2012 Datasheet

The KSD2012 is a NPN Epitaxial Silicon Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberKSD2012
Manufactureronsemi
Overview 98AON67439E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 . 012GTU TO−220 Fullpack (Pb−Free) Shipping† 1000 Units / Tube ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Value Symbol Parameter Test Condition Min Typ Max Unit BVCEO Collector−Emitter Breakdown Voltage IC = 50 mA, IB = 0 60 − − V ICBO Collector Cut−off Current VC.
Part NumberKSD2012
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations. NDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 60V ; IE=0 IEBO Emitter Cutoff Current VEB= 7V ; IC=0 hFE-1 DC Curre.
Part NumberKSD2012
DescriptionLow Frequency Power Amplifier
ManufacturerFairchild Semiconductor
Overview KSD2012 KSD2012 Low Frequency Power Amplifier • Complement to KSB1366 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise not. Typ. Max. 100 10 320 1 1 V V MHz Units V µA µA hFE Classification Classification hFE1 Y 100 ~ 200 G 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2012 Typical Characteristics 4 Ic[A], COLLECTOR CURRENT 3 hFE, DC CURRENT GAIN mA 90 mA I B = = 80 IB IB = 70m.