Datasheet Details
| Part number | KSD794A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.41 KB |
| Description | NPN Transistor |
| Datasheet |
 KSD794A Datasheet
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| Part number | KSD794A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.41 KB |
| Description | NPN Transistor |
| Datasheet |
KSD794A Datasheet
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·High Collector Current -IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·Complement to Type KSB744A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse 5 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.6 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A;
isc Silicon NPN Power Transistor KSD794A.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSD794A | Audio Frequency Power Amplifier | Fairchild Semiconductor |
 |
KSD794 | Silicon NPN Power Transistor | Inchange Semiconductor |
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KSD794 | NPN (AUDIO FREQUENCY POWER AMPLIFIER) | Samsung semiconductor |
|
KSD794 | Audio Frequency Power Amplifier | Fairchild Semiconductor |
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