KSD880W Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KSD880W TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current CONDITIONS IC= 3.0A; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE1 DC Current Gain hFE2 DC Current Gain IC= 0.5A;.
